Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA.
Nano Lett. 2010 Aug 11;10(8):3168-72. doi: 10.1021/nl102066q.
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100-nm length scales. Secondary ion mass spectroscopy measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
我们展示了一种基于电子束光刻胶中的孔径进行宽束氮注入来在金刚石中纳米制造氮空位（NV）中心的技术。这种方法能够在亚 100nm 的长度尺度上实现单 NV 中心的高通量纳米制造。二次离子质谱测量有助于对注入氮进行深度剖析，从而对 NV 中心空间分布进行三维表征。与片上共面波导的 NV 中心相干性测量表明，该可扩展的纳米制造技术在未来量子应用中有一条实现途径。
