Beckman Institute and Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA.
J Phys Chem B. 2010 Nov 18;114(45):14298-302. doi: 10.1021/jp911379c. Epub 2010 Aug 19.
The formation of mixed methyl/allyl monolayers has been accomplished through a two-step halogenation/alkylation reaction on Si(111) surfaces. The total coverage of alkylated Si, the surface recombination velocities, and the degree of surface oxidation as a function of time have been investigated using X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and microwave conductivity measurements. The total coverage of alkyl groups, the rate of oxidation, and the surface recombination velocities of Si(111) terminated by mixed monolayers were found to be close to those observed for CH(3)-Si(111) surfaces. Hence, the mixed-monolayer surfaces retained the beneficial properties of CH(3)-Si(111) surfaces while allowing for convenient secondary surface functionalization.
通过在 Si(111)表面上进行两步卤化/烷基化反应，成功制备了混合甲基/烯丙基单层。利用 X 射线光电子能谱、傅里叶变换红外光谱和微波电导率测量研究了烷基化 Si 的总覆盖率、表面复合速度以及表面氧化程度随时间的变化。混合单层封端的 Si(111)的烷基覆盖率、氧化速率和表面复合速度均接近 CH(3)-Si(111)表面的观察值。因此，混合单层表面保留了 CH(3)-Si(111)表面的有益特性，同时允许方便地进行二次表面功能化。
