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实现高通量可转换石墨烷到石墨烯的生长和图案化。

Toward high throughput interconvertible graphane-to-graphene growth and patterning.

机构信息

Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.

出版信息

ACS Nano. 2010 Oct 26;4(10):6146-52. doi: 10.1021/nn1017389.

DOI:10.1021/nn1017389
PMID:20845918
Abstract

We report a new route to prepare high quality, monolayer graphene by the dehydrogenation of graphane-like film grown by plasma-enhanced chemical vapor deposition. Large-area monolayer graphane-like film is first produced by remote-discharged radio frequency plasma beam deposition at 650 °C on Cu/Ti-coated SiO(2)-Si. The advantages of the plasma deposition include very short deposition time (<5 min) and a lower growth temperature of 650 °C compared to the current thermal chemical vapor deposition approach (1000 °C). Near edge X-ray adsorption, Raman spectroscopy, and transmission electron microscopy as well as scanning tunneling microscopy have been applied to characterize the graphane-to-graphene transition for the as-deposited films. The fingerprint quantum hall effect of monolayer graphene can be obtained on the fully dehydrogenated graphane-like film; four fully quantized half-integer plateaus are observed. The interconvertibility between graphane-like and graphene here opens up a possible route for the fabrication of regions with varying conductivity in a single deposition system using maskless, laser writing.

摘要

我们报告了一种新的途径,通过等离子体增强化学气相沉积生长的类石墨烷薄膜的脱氢反应来制备高质量的单层石墨烯。首先,在 Cu/Ti 涂层的 SiO2-Si 上,通过远程放电射频等离子体束沉积,在 650°C 下制备大面积单层类石墨烷薄膜。与目前的热化学气相沉积方法(1000°C)相比,等离子体沉积具有非常短的沉积时间(<5 分钟)和较低的生长温度 650°C 的优点。近边 X 射线吸附、拉曼光谱、透射电子显微镜和扫描隧道显微镜已被应用于对沉积膜的类石墨烷到石墨烯的转变进行表征。在完全脱氢的类石墨烷薄膜上可以获得单层石墨烯的指纹量子霍尔效应;观察到四个完全量子化的半整数平台。这里类石墨烷和石墨烯之间的可转换性为在单个沉积系统中使用无掩模、激光写入来制造具有不同电导率的区域开辟了一条可能的途径。

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