甲苯在电化学抛光铜箔上低温化学气相沉积生长石墨烯。

Low-temperature chemical vapor deposition growth of graphene from toluene on electropolished copper foils.

机构信息

Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, One University Station C2200, Austin, Texas 78712-0292, USA.

出版信息

ACS Nano. 2012 Mar 27;6(3):2471-6. doi: 10.1021/nn204827h. Epub 2012 Feb 24.

DOI:10.1021/nn204827h

PMID:22339048

Abstract

A two-step CVD route with toluene as the carbon precursor was used to grow continuous large-area monolayer graphene films on a very flat, electropolished Cu foil surface at 600 °C, lower than any temperature reported to date for growing continuous monolayer graphene. Graphene coverage is higher on the surface of electropolished Cu foil than that on the unelectropolished one under the same growth conditions. The measured hole and electron mobilities of the monolayer graphene grown at 600 °C were 811 and 190 cm(2)/(V·s), respectively, and the shift of the Dirac point was 18 V. The asymmetry in carrier mobilities can be attributed to extrinsic doping during the growth or transfer. The optical transmittance of graphene at 550 nm was 97.33%, confirming it was a monolayer, and the sheet resistance was ~8.02 × 10(3) Ω/□.

摘要

采用两步 CVD 路线，以甲苯作为碳前驱体，在 600°C 下于非常平坦的电解抛光 Cu 箔表面生长连续大面积单层石墨烯薄膜，低于迄今为止报道的任何生长连续单层石墨烯的温度。在相同的生长条件下，电解抛光 Cu 箔表面的石墨烯覆盖率高于未电解抛光 Cu 箔表面的石墨烯覆盖率。在 600°C 下生长的单层石墨烯的空穴和电子迁移率分别为 811 和 190 cm(2)/(V·s)，并且 Dirac 点的移动为 18 V。载流子迁移率的不对称性可归因于生长或转移过程中的外部掺杂。在 550nm 处石墨烯的光透过率为 97.33%，证实它是单层的，并且面电阻约为 8.02 × 10(3) Ω/□。