采用直写电子束光刻制造的抗蚀剂基诺夫的连续显影优化。

Successive development optimization of resist kinoforms manufactured with direct-writing, electron-beam lithography.

作者信息

Larsson M, Ekberg M, Nikolajeff F, Hård S

出版信息

Appl Opt. 1994 Mar 1;33(7):1176-9. doi: 10.1364/AO.33.001176.

DOI:10.1364/AO.33.001176

PMID:20862134

Abstract

It is shown that multilevel SAL 110 resist kinoforms can be developed stepwise. Measurements of the kinoform diffraction pattern, performed between the development steps, permitted correct final developments to be made. No significant relief shape degradation was observed for development times as high as 25 min. The results imply that the electron-beam exposure doses, and hence the exposure time, can be reduced by a factor of 3 compared with doses used currently.

摘要

结果表明，多级SAL 110抗蚀剂基诺型可以逐步显影。在显影步骤之间对基诺型衍射图案进行测量，从而能够进行正确的最终显影。对于长达25分钟的显影时间，未观察到明显的浮雕形状退化。结果表明，与目前使用的剂量相比，电子束曝光剂量以及曝光时间可以减少三分之一。