School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA.
IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Sep;57(9):2035-41. doi: 10.1109/TUFFC.2010.1651.
This paper presents the Butterworth-van Dyke model and quantitative comparison that explore the design space of lead zirconate titanate-only (PZT) and PZT on 3-, 5-, and 10-μm single-crystal silicon (SCS) high-overtone width-extensional mode (WEM) resonators with identical lateral dimensions for incorporation into radio frequency microelectromechanical systems (RF MEMS) filters and oscillators. A novel fabrication technique was developed to fabricate the resonators with and without a silicon carrier layer using the same mask set on the same wafer. The air-bridge metal routings were implemented to carry electrical signals while avoiding large capacitances from the bond-pads. We theoretically derived and experimentally measured the correlation of motional impedance (RX), quality factor (Q), and resonance frequency (f) with the resonators' silicon layer thickness (tSi) up to frequencies of operation above 1 GHz.
本文提出了 Butterworth-van Dyke 模型和定量比较，以探索仅含锆钛酸铅（PZT）和 PZT 的设计空间，以及在相同横向尺寸下的 3μm、5μm 和 10μm 单晶硅（SCS）高次泛音宽拉伸模式（WEM）谐振器，以用于射频微机电系统（RF MEMS）滤波器和振荡器。开发了一种新的制造技术，使用相同的掩模集在同一晶圆上制造带有和不带有硅载体层的谐振器。采用空气桥金属布线来传输电信号，同时避免了来自键合焊盘的大电容。我们从理论上推导并实验测量了运动阻抗（RX）、品质因数（Q）和共振频率（f）与谐振器硅层厚度（tSi）之间的相关性，直至操作频率高于 1GHz。
