Anyebe Ezekiel Anyebe
School of Engineering, Cardiff University, Cardiff CF24 3AA, UK.
Nanomaterials (Basel). 2020 Oct 19;10(10):2064. doi: 10.3390/nano10102064.
During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III-As Antimonide (III-As-Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)-compatible silicon substrate to exploit its scalability, and relative abundance in high-performance and cost-effective integrated circuits based on the well-established technology. Ternary III-As-Sb nanowires (NWs) hold enormous promise for the fabrication of high-performance optoelectronic nanodevices with tunable bandgap. However, the direct epitaxial growth of gold-free ternary III-As-Sb NWs on silicon is extremely challenging, due to the surfactant effect of Sb. This review highlights the recent progress towards the monolithic integration of III-As-Sb NWs on Si. First, a comprehensive and in-depth review of recent progress made in the gold-free growth of III-As-Sb NWs directly on Si is explicated, followed by a detailed description of the root cause of Sb surfactant effect and its influence on the morphology and structural properties of Au-free ternary III-As-Sb NWs. Then, the various strategies that have been successfully deployed for mitigating the Sb surfactant effect for enhanced Sb incorporation are highlighted. Finally, recent advances made in the development of CMOS compatible, Ternary III-As-Sb NWs based, high-performance optoelectronic devices are elucidated.
在过去几年中，人们重新对在与互补金属氧化物半导体（CMOS）兼容的硅衬底上进行无金三元III - 砷锑化物（III - As - Sb）化合物半导体材料的单片集成产生了兴趣，以利用其可扩展性，以及基于成熟技术在高性能和高性价比集成电路中的相对丰富性。三元III - As - Sb纳米线（NWs）在制造具有可调带隙的高性能光电子纳米器件方面具有巨大潜力。然而，由于Sb的表面活性剂效应，在硅上直接外延生长无金三元III - As - Sb纳米线极具挑战性。本综述重点介绍了在Si上进行III - As - Sb纳米线单片集成的最新进展。首先，详细阐述了在Si上直接进行无金生长III - As - Sb纳米线的最新进展，接着详细描述了Sb表面活性剂效应的根本原因及其对无金三元III - As - Sb纳米线的形态和结构特性的影响。然后，重点介绍了为减轻Sb表面活性剂效应以增强Sb掺入而成功采用的各种策略。最后，阐明了基于CMOS兼容的三元III - As - Sb纳米线的高性能光电子器件开发的最新进展。
