Dad Sania, Dziawa Piotr, Zajkowska-Pietrzak Wiktoria, Kret Sławomir, Kozłowski Mirosław, Wójcik Maciej, Sadowski Janusz
Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668, Warsaw, Poland.
Faculty of Physics, University of Warsaw, Pasteura 5, 02093, Warsaw, Poland.
Sci Rep. 2024 Jan 5;14(1):589. doi: 10.1038/s41598-024-51200-w.
We investigate the full and half-shells of PbSnTe topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch between both materials along the nanowire axis is less than 4%. The PbSnTe solid solution is chosen due to the topological crystalline insulator properties above some critical concentrations of Sn (x ≥ 0.36). The IV-VI shells are grown with different compositions spanning from binary SnTe, through PbSnTe with decreasing x value down to binary PbTe (x = 0). The samples are analysed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100) PbSnTe on the sidewalls of wurtzite GaAs NWs.
我们研究了通过分子束外延生长在纤锌矿型砷化镓纳米线（NWs）侧壁上的拓扑晶态绝缘体PbSnTe的完整壳层和半壳层。由于IV-VI壳层相对于III-V核具有不同的取向，两种材料沿纳米线轴的晶格失配小于4%。选择PbSnTe固溶体是因为在高于某个临界锡浓度（x≥0.36）时具有拓扑晶态绝缘体特性。IV-VI壳层以不同的组成生长，范围从二元SnTe，经过x值逐渐降低的PbSnTe，直至二元PbTe（x = 0）。通过扫描透射电子显微镜对样品进行分析，结果表明在纤锌矿型砷化镓纳米线的侧壁上存在（110）或（100）取向的二元PbTe以及（100）PbSnTe。
