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使用优化的局部氧化硅工艺展示亚微米方形硅波导。

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process.

作者信息

Desiatov Boris, Goykhman Ilya, Levy Uriel

机构信息

Department of Applied Physics, The Benin School of Engineering and Computer Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel.

出版信息

Opt Express. 2010 Aug 30;18(18):18592-7. doi: 10.1364/OE.18.018592.

Abstract

We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

摘要

我们展示了一种通过硅的局部氧化制造的亚微米级硅波导的设计、制造和实验表征。局部氧化工艺的使用允许定义波导几何形状并获得光滑的侧壁。该工艺可以调整以精确控制波导的形状和尺寸。使用近场扫描光学显微镜在1550纳米波长下对制造的波导进行测量。这些测量显示模式宽度为0.4微米,有效折射率为2.54。最后,我们通过使用红外相机对光散射进行成像,展示了我们波导的低损耗特性。

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