CAS Key laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Science, 1295 Dingxi Road, Shanghai, 200050, PR China.
Dalton Trans. 2010 Dec 7;39(45):10883-7. doi: 10.1039/c0dt00840k. Epub 2010 Oct 15.
Nanostructured bismuth selenide thin films have been successfully fabricated on a silicon substrate at low temperature by rational design of the precursor solution. Bi(2)Se(3) thin films were constructed of coalesced lamella in the thickness of 50-80 nm. The nucleation and growth process of Bi(2)Se(3) thin films, as well as the influence of solution chemistry on the film structure were investigated in detail. As one of the most promising thermoelectric materials, the thermoelectric properties of the prepared Bi(2)Se(3) thin films were also investigated. The power factor increased with increasing carrier mobility, coming from the enlarged crystallites and enhanced coalesced structure, and reached 1 μW cm(-1) K(-1).
通过合理设计前驱体溶液，在低温下成功地在硅衬底上制备了纳米结构的硒化铋薄膜。Bi(2)Se(3)薄膜由厚度为 50-80nm 的合并薄片组成。详细研究了 Bi(2)Se(3)薄膜的成核和生长过程以及溶液化学对薄膜结构的影响。作为最有前途的热电材料之一，还研究了制备的 Bi(2)Se(3)薄膜的热电性能。功率因子随着载流子迁移率的增加而增加，这是由于晶粒增大和合并结构增强所致，达到 1μWcm(-1)K(-1)。
