Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA.
Philos Trans A Math Phys Eng Sci. 2010 Dec 13;368(1932):5355-77. doi: 10.1098/rsta.2010.0213.
This review discusses advances that have been made in the study of defect-induced double-resonance processes in nanographite, graphene and carbon nanotubes, mostly coming from combining Raman spectroscopic experiments with microscopy studies and from the development of new theoretical models. The disorder-induced peak frequencies and intensities are discussed, with particular emphasis given to how the disorder-induced features evolve with increasing amounts of disorder. We address here two systems, ion-bombarded graphene and nanographite, where disorder is represented by point defects and boundaries, respectively. Raman spectroscopy is used to study the 'atomic structure' of the defect, making it possible, for example, to distinguish between zigzag and armchair edges, based on selection rules of phonon scattering. Finally, a different concept is discussed, involving the effect that defects have on the lineshape of Raman-allowed peaks, owing to local electron and phonon energy renormalization. Such effects can be observed by near-field optical measurements on the G' feature for doped single-walled carbon nanotubes.
本文综述了在研究纳米石墨、石墨烯和碳纳米管中缺陷诱导的双共振过程方面取得的进展，这些进展主要来自拉曼光谱实验与显微镜研究的结合，以及新理论模型的发展。本文讨论了无序诱导的峰频率和强度，特别强调了无序诱导特征随无序程度增加的演变方式。本文讨论了两个系统，离子轰击的石墨烯和纳米石墨，其中无序分别由点缺陷和边界表示。拉曼光谱用于研究缺陷的“原子结构”，例如，基于声子散射的选择定则，有可能区分锯齿形和扶手椅边缘。最后，本文讨论了一个不同的概念，涉及缺陷对拉曼允许峰线形状的影响，这是由于局部电子和声子能量的重整化。对于掺杂的单壁碳纳米管，通过近场光学测量可以观察到这种效应在 G'特征上的表现。
