Corrales C, Ramírez-Malo J B, Fernández-Peña J, Villares P, Swanepoel R, Márquez E
Appl Opt. 1995 Dec 1;34(34):7907-13. doi: 10.1364/AO.34.007907.
The dispersive refractive index n(λ) and thickness d of chalcogenide glass thin films are usually calculated from measurements of both optical transmission and wavelength values. Many factors can influence the transmission values, leading to large errors in the values obtained for n(λ) and d. Anovel optical method is used to derive n(λ) and d for AsSe semiconducting glass thin films deposited by thermal evaporation in the spectral region where k(2) « n(2), using only wavelength values. This entails obtaining two transmission spectra: one at normal incidence and another at oblique incidence. The procedure yields values for the refractive index and average thickness of thermally evaporated chalcogenide films to an accuracy better than 3%.
硫系玻璃薄膜的色散折射率n(λ)和厚度d通常通过光学透射率和波长值的测量来计算。许多因素会影响透射率值,从而导致n(λ)和d值出现较大误差。本文采用一种新颖的光学方法,仅利用波长值来推导通过热蒸发沉积的AsSe半导体玻璃薄膜在k(2) « n(2)光谱区域的n(λ)和d。这需要获得两个透射光谱:一个是正入射时的光谱,另一个是斜入射时的光谱。该方法得到的热蒸发硫系薄膜的折射率和平均厚度值的精度优于3%。