通过液滴外延法在硅上生长的低热预算III-V族纳米结构的光致发光研究

Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy.

作者信息

Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S, Isella G, Chrastina D, Fedorov A

出版信息

Nanoscale Res Lett. 2010 Jul 18;5(10):1650-3. doi: 10.1007/s11671-010-9689-8.

DOI:10.1007/s11671-010-9689-8

PMID:21076665

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2956041/

Abstract

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.

摘要

我们展示了在硅衬底上生长的高效GaAs/AlGaAs量子纳米结构的详细光致发光特性。GaAs/AlGaAs有源层的整个形成过程通过液滴外延和迁移增强外延实现，生长温度保持在≤350°C，从而产生了一种低热预算工艺，该工艺与将制造的材料后端集成到集成电路上兼容。