LENS and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, I-50019, Sesto Fiorentino, Italy.
J Phys Condens Matter. 2012 Mar 14;24(10):104017. doi: 10.1088/0953-8984/24/10/104017. Epub 2012 Feb 21.
The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. The CRD structures are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, is compatible with the monolithic integration of III-V devices on Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations in the effective mass approximations are presented for the assessment of the electronic and carrier properties of the CRDs. The CRDs show a fast carrier dynamics which is expected to be suitable for ultrafast optical switching applications integrated on silicon.
本文介绍了在硅衬底上制备的 GaAs/AlGaAs 耦合环盘（CRD）量子结构中的发射动力学。CRD 结构通过液滴外延自组装而成，该生长技术由于其低热预算，与基于 Si 的电子电路上的 III-V 器件的单片集成兼容。连续波、时间分辨光致发光和有效质量近似理论计算用于评估 CRD 的电子和载流子特性。CRD 表现出快速的载流子动力学，有望适用于集成在硅上的超快速光开关应用。
