Ohta Hiromichi, Sato Yukio, Kato Takeharu, Kim Sungwng, Nomura Kenji, Ikuhara Yuichi, Hosono Hideo
1] Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan. [2] PRESTO, Japan Science and Technology Agency, 5 Sanbancho, Chiyoda, Tokyo 102-0075, Japan.
Nat Commun. 2010 Nov 16;1:118. doi: 10.1038/ncomms1112.
Water is composed of two strong electrochemically active agents, H(+) and OH(-) ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO(3), using water-infiltrated nanoporous glass-amorphous 12CaO·7Al(2)O(3)-as the gate insulator. Positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO(3) surface at room temperature. This leads to the formation of a thin (~3 nm) metal layer with an extremely high electron concentration (10(15)-10(16) cm(-2)), which exhibits exotic thermoelectric behaviour. The electron activity of water as it infiltrates nanoporous glass may find many useful applications in electronics or in energy storage.
水由两种具有强电化学活性的成分，即H(+)和OH(-)离子组成，但尚未被用作氧化物半导体中的活性电子材料。在本研究中，我们证明了水浸润的纳米多孔玻璃可使氧化物半导体从绝缘体电切换为金属。我们使用水浸润的纳米多孔玻璃——非晶态12CaO·7Al(2)O(3)——作为栅极绝缘体，在氧化物半导体SrTiO(3)上制备了场效应晶体管结构。在室温下，正栅极电压、电子积累、水电解和电化学还原在SrTiO(3)表面依次发生。这导致形成了一个具有极高电子浓度（10(15)-10(16) cm(-2)）的薄（约3纳米）金属层，该金属层表现出奇特的热电行为。水渗透到纳米多孔玻璃时的电子活性可能在电子学或能量存储中有许多有用的应用。
