Max Planck Institute of Microstructure Physics, Halle (Saale), Germany.
Nanotechnology. 2011 Jan 7;22(1):015605. doi: 10.1088/0957-4484/22/1/015605. Epub 2010 Dec 6.
We present growth studies of InSb nanowires grown directly on [Formula: see text] and [Formula: see text] substrates. The nanowires were synthesized in a chemical beam epitaxy (CBE) system and are of cubic zinc blende structure. To initiate nanowire nucleation we used lithographically positioned silver (Ag) seed particles. Up to 87% of the nanowires nucleate at the lithographically pre-defined positions. Transmission electron microscopy (TEM) investigations furthermore showed that, typically, a parasitic InSb thin film forms on the substrates. This thin film is more pronounced for InSb((111)B) substrates than for InAs((111)B) substrates, where it is completely absent at low growth temperatures. Thus, using InAs((111)B) substrates and growth temperatures below 360 °C free-standing InSb nanowires can be synthesized.
我们展示了直接在 [Formula: see text] 和 [Formula: see text] 衬底上生长的 InSb 纳米线的生长研究。这些纳米线是在化学束外延 (CBE) 系统中合成的，具有立方闪锌矿结构。为了引发纳米线成核，我们使用了光刻定位的银 (Ag) 种子颗粒。高达 87%的纳米线在光刻预定义的位置成核。透射电子显微镜 (TEM) 研究还表明，通常情况下，在衬底上会形成寄生的 InSb 薄膜。对于 InSb((111)B) 衬底，这种薄膜更为明显，而对于 InAs((111)B) 衬底，在低温生长时完全不存在。因此，使用 InAs((111)B) 衬底和低于 360°C 的生长温度，可以合成独立的 InSb 纳米线。
