NEST, Scuola Normale Superiore and CNR-INFM, Piazza S. Silvestro 12, I-56127 Pisa, Italy.
Nanotechnology. 2009 Dec 16;20(50):505605. doi: 10.1088/0957-4484/20/50/505605. Epub 2009 Nov 12.
We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn(2), and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.
我们报告了无缺陷闪锌矿 InSb 纳米线的 Au 辅助化学束外延生长。所生长的 InSb 段是 InAs(111)B 衬底上 InAs/InSb 异质结构的上部。通过高分辨率透射电子显微镜分析，我们表明可以在没有任何晶体缺陷（如位错或孪晶面）的情况下生长闪锌矿 InSb。应变映射分析表明，InSb 段在离界面几纳米的范围内几乎是松弛的。通过后生长研究，我们发现催化剂颗粒的组成是 AuIn(2)，并且可以通过在 TDMASb 通量下冷却样品将其变为 AuIn 合金。
