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利用石墨烯晶体管探测表面的电荷转移。

Probing charge transfer at surfaces using graphene transistors.

机构信息

Regroupement Québécois sur les matériaux de pointe, Université de Montréal, Montréal, Québec H3C 3J7, Canada.

出版信息

Nano Lett. 2011 Jan 12;11(1):132-7. doi: 10.1021/nl103015w. Epub 2010 Dec 9.

Abstract

Graphene field effect transistors (FETs) are extremely sensitive to gas exposure. Charge transfer doping of graphene FETs by atmospheric gas is ubiquitous but not yet understood. We have used graphene FETs to probe minute changes in electrochemical potential during high-purity gas exposure experiments. Our study shows quantitatively that electrochemistry involving adsorbed water, graphene, and the substrate is responsible for doping. We not only identify the water/oxygen redox couple as the underlying mechanism but also capture the kinetics of this reaction. The graphene FET is highlighted here as an extremely sensitive potentiometer for probing electrochemical reactions at interfaces, arising from the unique density of states of graphene. This work establishes a fundamental basis on which new electrochemical nanoprobes and gas sensors can be developed with graphene.

摘要

石墨烯场效应晶体管(FET)对气体暴露极其敏感。大气气体对石墨烯 FET 的电荷转移掺杂普遍存在,但尚未被理解。我们已经使用石墨烯 FET 来探测在高纯气体暴露实验过程中电化学势的微小变化。我们的研究定量表明,涉及吸附水、石墨烯和衬底的电化学是掺杂的原因。我们不仅确定了水/氧氧化还原对作为潜在机制,还捕捉到了该反应的动力学。石墨烯 FET 在这里被突出为一种非常敏感的电位计,用于探测界面处的电化学反应,这源于石墨烯独特的态密度。这项工作为使用石墨烯开发新的电化学纳米探针和气体传感器奠定了基础。

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