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在使用 VHGNarrowed 激光二极管阵列进行 Rb/129Xe 自旋交换光泵浦时,细胞内氙密度和温度的相互依赖性。

Interdependence of in-cell xenon density and temperature during Rb/129Xe spin-exchange optical pumping using VHG-narrowed laser diode arrays.

机构信息

Department of Chemistry and Biochemistry, Southern Illinois University, Carbondale, IL 62901, USA.

出版信息

J Magn Reson. 2011 Feb;208(2):298-304. doi: 10.1016/j.jmr.2010.11.016. Epub 2010 Dec 2.

Abstract

The (129)Xe nuclear spin polarization (P(Xe)) that can be achieved via spin-exchange optical pumping (SEOP) is typically limited at high in-cell xenon densities (Xe), due primarily to corresponding reductions in the alkali metal electron spin polarization (e.g. P(Rb)) caused by increased non-spin-conserving Rb-Xe collisions. While demonstrating the utility of volume holographic grating (VHG)-narrowed lasers for Rb/(129)Xe SEOP, we recently reported [P. Nikolaou et al., JMR 197 (2009) 249] an anomalous dependence of the observed P(Xe) on the in-cell xenon partial pressure (p(Xe)), wherein P(Xe) values were abnormally low at decreased p(Xe), peaked at moderate p(Xe) (~300 torr), and remained surprisingly elevated at relatively high p(Xe) values (>1000 torr). Using in situ low-field (129)Xe NMR, it is shown that the above effects result from an unexpected, inverse relationship between the xenon partial pressure and the optimal cell temperature (T(OPT)) for Rb/(129)Xe SEOP. This interdependence appears to result directly from changes in the efficiency of one or more components of the Rb/(129)Xe SEOP process, and can be exploited to achieve improved P(Xe) with relatively high xenon densities measured at high field (including averaged P(Xe) values of ~52%, ~31%, ~22%, and ~11% at 50, 300, 500, and 2000 torr, respectively).

摘要

通过自旋交换光学泵浦(SEOP)可以实现的(129)Xe 核自旋极化(P(Xe)),在高细胞内氙气密度(Xe)下通常会受到限制,这主要是由于增加的非自旋守恒的 Rb-Xe 碰撞导致碱金属电子自旋极化(例如 P(Rb))相应降低。虽然我们最近已经展示了体积全息光栅(VHG)窄化激光在 Rb/(129)Xe SEOP 中的应用,但我们也报告了[P. Nikolaou 等人,JMR 197(2009)249]一个观测到的 P(Xe)对细胞内氙气压(p(Xe))的异常依赖性,其中在 p(Xe)降低时 P(Xe)值异常低,在中等 p(Xe)(300 托)时达到峰值,并且在相对较高的 p(Xe)值(>1000 托)时仍然出人意料地升高。通过原位低场(129)Xe NMR,我们表明,上述效应是由于 Rb/(129)Xe SEOP 的氙气压和最佳细胞温度(T(OPT))之间出现了意想不到的反比关系。这种相互依存关系似乎直接源自 Rb/(129)Xe SEOP 过程中一个或多个组件效率的变化,并且可以利用它来实现相对较高的氙气密度下的改善的 P(Xe),这是在高场下测量的,包括在 50、300、500 和 2000 托时的平均 P(Xe)值分别为52%、31%、22%和~11%。

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