Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan.
Nanoscale Res Lett. 2011 Jul 29;6(1):479. doi: 10.1186/1556-276X-6-479.
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.
硅场效应晶体管的栅长现已达到仅数十纳米，沟道中只包含可数数量的掺杂原子。这种技术趋势使我们进入了研究使用一个或几个掺杂原子的器件的阶段。在这项工作中，我们回顾了我们最近关于具有绝缘体上硅 MOSFET 基本结构的关键原子器件的研究，例如单掺杂晶体管、初步的存储器件、单电子转门器件和光子器件，其中单掺杂原子介导的电子隧穿是基本的传输机制。此外，还通过凯氏探针力显微镜观察到了沟道中单个掺杂原子的势。这些结果可能为开发新的器件技术铺平道路，即单掺杂原子电子学。
