ACS Appl Mater Interfaces. 2011 Feb;3(2):139-42. doi: 10.1021/am101135v. Epub 2011 Jan 27.
We studied how the layers with different transport properties buried inside a semiconductor material affect the characteristics of organic thin film transistors (OTFT) using a well-defined multilayered structure fabricated by a contact film transfer method that we recently developed (ACS Appl. Mater. Interfaces 1, 2660 (2009)). A simple model with the charge distribution in the organic semiconductor film, the mobility dependence on the charge density, and the buried surface layers with a high mobility successfully reproduced the experimental mobility dependence on the thickness of the spin-coated films and the gate voltage. These results demonstrated that charge transport layers located far from the dielectric interface could contribute significantly to the total current in OTFTs.
我们使用最近开发的接触膜转移方法（ACS Appl. Mater. Interfaces 1, 2660 (2009)) 制造的具有良好定义的多层结构，研究了埋在半导体材料内部的具有不同传输特性的层如何影响有机薄膜晶体管（OTFT）的特性。一个简单的模型，具有有机半导体薄膜中的电荷分布，迁移率对电荷密度的依赖性，以及具有高迁移率的埋入表面层，成功地再现了实验中迁移率对旋涂薄膜厚度和栅极电压的依赖性。这些结果表明，位于远离介电界面的电荷传输层可以显著影响 OTFT 中的总电流。
