High-performance programmable memory devices based on co-doped BaTiO3.
作者信息
Yan Zhibo, Guo Yanyan, Zhang Guoquan, Liu J-M
机构信息
Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China.
出版信息
Adv Mater. 2011 Mar 18;23(11):1351-5. doi: 10.1002/adma.201004306. Epub 2011 Feb 15.
PMID:21384443
Abstract
摘要
Zotero 插件