基于多层金属氧化物结构的高性能电阻和电容存储器共存。
Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.
机构信息
Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P R China.
出版信息
Sci Rep. 2013;3:2482. doi: 10.1038/srep02482.
Abstract
The Au/DyMnO₃/Nb:SrTiO₃/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO₃/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO₃/Nb:SrTiO₃ stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.
摘要
Au/DyMnO₃/Nb:SrTiO₃/Au 堆叠不仅表现出高性能忆阻器的特性，还是一个良好的忆容器。其开关时间低于 10 ns，保持时间长于 10(5) s，在 10(8) 次开关循环中，电阻（或电容）的变化率大于 100。此外，这个堆叠具有广泛的中间状态，可通过工作电压进行调节。结果表明，记忆效应源于 Nb:SrTiO₃/Au 结，其势垒分布可通过电调制进行调控。串联的 Au/DyMnO₃/Nb:SrTiO₃ 堆叠表现为一个高非线性电阻与电容并联，这提高了电容变化率，并增强了器件的记忆稳定性。
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