Ha Yeonjoo, Lim Hyungjun, Choi Hak-Jong, Lee JaeJong
Korea Institute of Machinery and Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon 34103, Korea.
Department of Nanomechatronics, University of Science and Technology, 217, Gajeong-ro, Yuseong-gu, Daejeon 34113, Korea.
Materials (Basel). 2022 Sep 1;15(17):6036. doi: 10.3390/ma15176036.
Nanoimprint lithography (NIL) is suitable for achieving high uniformity and mass production. However, in conventional NIL, a stamp suitable for the substrate size is required to increase the substrate size. To address this issue, we fabricated nanostructures on a large-area substrate using step-and-repeat NIL after making a small stamp. A stamp was produced using glass, and a nano-pillar pattern with a diameter of 600 nm, an interval of 400 nm, and a height of 270 nm was used during the experiment. The area of the pattern on the stamp was 10 mm × 10 mm, and the step-and-repeat process was performed 25 times to transfer the nanostructures to a 4-inch substrate. In addition, stitch gaps were created between the patterns, which could decrease the performance upon future application. To minimize this stitch gap, a high-precision glass scale was attached to the stamp feeder to precisely control the position and to minimize the step difference. Moreover, an experiment was conducted to minimize the stitch gap by adjusting the movement interval of the stamp, and the stitch spacing was minimized by moving the stamp position by 9.97 mm. This approach will facilitate the manufacturing of large-area substrates and other structures in the future.
纳米压印光刻技术（NIL）适用于实现高均匀性和大规模生产。然而，在传统的纳米压印光刻技术中，为了增大衬底尺寸，需要一个与衬底尺寸相适配的压模。为了解决这个问题，我们在制作了一个小压模之后，使用分步重复纳米压印光刻技术在大面积衬底上制造纳米结构。使用玻璃制作了一个压模，实验过程中使用了直径为600纳米、间距为400纳米、高度为270纳米的纳米柱图案。压模上图案的面积为10毫米×10毫米，分步重复过程进行了25次，以便将纳米结构转移到一个4英寸的衬底上。此外，在图案之间产生了拼接间隙，这可能会降低未来应用时的性能。为了最小化这种拼接间隙，在压模进料器上安装了一个高精度玻璃标尺，以精确控制位置并最小化步距差。此外，还进行了一项实验，通过调整压模的移动间隔来最小化拼接间隙，通过将压模位置移动9.97毫米，拼接间距被最小化。这种方法将有助于未来大面积衬底和其他结构的制造。
