Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon, Korea.
ACS Nano. 2011 Jun 28;5(6):5242-8. doi: 10.1021/nn2014358. Epub 2011 May 13.
A generic process for the preparation of curved silicon nanowires (SiNWs) with ribbon-like cross sections was developed. The present synthetic approach is based on chemical etching of (100)-oriented silicon wafers in mixture solutions of HF and H(2)O(2) by using patterned thin gold films as catalyst and provides a unique opportunity for the fabrication of extended arrays of zigzag SiNWs, ultrathin straight [111] SiNWs, and curved SiNWs with controlled turning angles. On the basis of our experiments performed under various etching conditions, the factors governing the axial crystal orientation and morphology of SiNWs were systematically analyzed. We proposed a model that explains the formation of the present novel silicon nanostructures during chemical etching of silicon.
一种通用的制备具有带状横截面的弯曲硅纳米线 (SiNWs) 的方法已经开发出来。本合成方法基于在 HF 和 H2O2混合溶液中对（100）取向的硅片进行化学腐蚀，使用图案化的薄金膜作为催化剂，并为制备扩展的锯齿形 SiNWs、超薄的直[111]SiNWs 和具有可控转弯角度的弯曲 SiNWs 提供了独特的机会。根据我们在各种蚀刻条件下进行的实验，系统地分析了影响 SiNWs 轴向晶体取向和形态的因素。我们提出了一个模型，解释了在硅的化学腐蚀过程中形成这种新型硅纳米结构的过程。
