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与兴奋性氨基酸转运体 4 相关的阴离子通道的底物门控。

Substrate-dependent gating of anion channels associated with excitatory amino acid transporter 4.

机构信息

Institut für Neurophysiologie, Medizinische Hochschule, 30625 Hannover, Germany.

出版信息

J Biol Chem. 2011 Jul 8;286(27):23780-8. doi: 10.1074/jbc.M110.207514. Epub 2011 May 13.

Abstract

EAAT glutamate transporters do not only function as secondary-active glutamate transporters but also as anion channels. EAAT anion channel activity depends on transport substrates. For most isoforms, it is negligible without external Na(+) and increased by external glutamate. We here investigated gating of EAAT4 anion channels with various cations and amino acid substrates using patch clamp experiments on a mammalian cell line. We demonstrate that Li(+) can substitute for Na(+) in supporting substrate-activated anion currents, albeit with changed voltage dependence. Anion currents were recorded in glutamate, aspartate, and cysteine, and distinct time and voltage dependences were observed. For each substrate, gating was different in external Na(+) or Li(+). All features of voltage-dependent and substrate-specific anion channel gating can be described by a simplified nine-state model of the transport cycle in which only amino acid substrate-bound states assume high anion channel open probabilities. The kinetic scheme suggests that the substrate dependence of channel gating is exclusively caused by differences in substrate association and translocation. Moreover, the voltage dependence of anion channel gating arises predominantly from electrogenic cation binding and membrane translocation of the transporter. We conclude that all voltage- and substrate-dependent conformational changes of the EAAT4 anion channel are linked to transitions within the transport cycle.

摘要

EAAT 谷氨酸转运体不仅作为次级主动型谷氨酸转运体起作用,而且作为阴离子通道起作用。EAAT 阴离子通道活性取决于转运底物。对于大多数同工型,如果没有外部 Na(+)并且外部谷氨酸增加,其活性可以忽略不计。我们使用哺乳动物细胞系上的膜片钳实验研究了各种阳离子和氨基酸底物对 EAAT4 阴离子通道的门控作用。我们证明 Li(+)可以替代 Na(+)支持底物激活的阴离子电流,尽管电压依赖性发生了变化。在谷氨酸、天冬氨酸和半胱氨酸中记录到阴离子电流,并观察到明显的时间和电压依赖性。对于每种底物,外部 Na(+)或 Li(+)中的门控作用都不同。电压依赖性和底物特异性阴离子通道门控的所有特征都可以用简化的转运循环九状态模型来描述,其中只有氨基酸底物结合状态具有高阴离子通道开放概率。该动力学方案表明,通道门控的底物依赖性仅由底物结合和转运的差异引起。此外,阴离子通道门控的电压依赖性主要来自转运体的生电性阳离子结合和膜转运。我们得出结论,EAAT4 阴离子通道的所有电压和底物依赖性构象变化都与转运循环内的转变有关。

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