Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Nanotechnology. 2011 Jul 8;22(27):275204. doi: 10.1088/0957-4484/22/27/275204. Epub 2011 May 25.
We report an improvement in minimizing the dispersion of resistive switching (RS) parameters such as ON/OFF state resistances and switching voltages of Cu/ZnO/Pt structures in which ZnO films have been deposited at elevated temperature with N doping. This deposition process can enlarge the ZnO grain size and lessen grain boundaries while maintaining a high initial resistance since ZnO naturally shows n-type conductivity and N is a p-type dopant but with a low solubility. Cu filaments with a diameter of 15 nm are found to form at the ZnO grain boundaries. Therefore, fewer grain boundaries could depress the randomicity of the formation/rupture of Cu filaments and result in more stable RS performances. Such memory devices show a fast programming speed of 10 ns.
我们报告了一种改进方法，可以最小化 Cu/ZnO/Pt 结构中电阻开关 (RS) 参数的分散性，例如 ZnO 薄膜在高温下沉积并进行 N 掺杂时的 ON/OFF 状态电阻和开关电压。这种沉积工艺可以增大 ZnO 晶粒尺寸并减少晶界，同时保持较高的初始电阻，因为 ZnO 本身表现出 n 型导电性，而 N 是 p 型掺杂剂，但溶解度较低。在 ZnO 晶界处发现直径为 15nm 的 Cu 细丝。因此，较少的晶界可以抑制 Cu 细丝的形成/断裂的随机性，从而产生更稳定的 RS 性能。这种存储器件具有 10ns 的快速编程速度。
