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隧穿电流诱导的赝力:在 Si(111)上的特性化。

Phantom force induced by tunneling current: a characterization on Si(111).

机构信息

Institute of Experimental and Applied Physics, University of Regensburg, Regensburg, Germany.

出版信息

Phys Rev Lett. 2011 Jun 3;106(22):226801. doi: 10.1103/PhysRevLett.106.226801. Epub 2011 Jun 1.

Abstract

Simultaneous measurements of tunneling current and atomic forces provide complementary atomic-scale data of the electronic and structural properties of surfaces and adsorbates. With these data, we characterize a strong impact of the tunneling current on the measured force on samples with limited conductivity. The effect is a lowering of the effective gap voltage through sample resistance which in turn lowers the electrostatic attraction, resulting in an apparently repulsive force. This effect is expected to occur on other low-conductance samples, such as adsorbed molecules, and to strongly affect Kelvin probe measurements when tunneling occurs.

摘要

同时测量隧道电流和原子力,为表面和吸附物的电子和结构特性提供互补的原子尺度数据。有了这些数据,我们就可以描述在导电性有限的样品上,隧道电流对所测力的强烈影响。这种效应通过样品电阻降低有效间隙电压,从而降低静电吸引力,导致表面出现明显的排斥力。这种效应预计会出现在其他低电导率的样品上,如吸附分子,并且当隧道电流发生时,会强烈影响 Kelvin 探针测量。

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