Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature.

作者信息

Telychko Mykola, Berger Jan, Majzik Zsolt, Jelínek Pavel, Švec Martin

机构信息

Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic ; Charles University, Faculty of Mathematics and Physics, V Holešovičkách 2, Praha 8, Czech Republic.

Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic ; Department of Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, CZ-11519 Prague, Czech Republic.

出版信息

Beilstein J Nanotechnol. 2015 Apr 7;6:901-6. doi: 10.3762/bjnano.6.93. eCollection 2015.

DOI:10.3762/bjnano.6.93

PMID:25977861

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4419658/

Abstract

We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

摘要