Graduate Institute of Biomedical Materials and Tissue Engineering, College of Oral Medicine, Taipei Medical University, Taipei 110, Taiwan.
Nanoscale Res Lett. 2013 Jul 31;8(1):340. doi: 10.1186/1556-276X-8-340.
In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol-gel film.
在这项研究中，使用溶胶-凝胶旋涂法并在低温退火下制备了一种高性能的 TixZrySizO 闪存。通过沉积高效的电荷存储层来形成高效的电荷存储层，该存储层由四氯化钛、四氯化硅和四氯化锆的混合溶液组成，然后在 600°C 下退火 60 秒。该闪存具有显著的热空穴俘获特性和出色的电性能，包括存储窗口、编程/擦除速度和电荷保持能力。在仅 6V 的工作电压下，编程/擦除速度可以快至 120:5.2μs，且仅需 2V 的电压变化，存储窗口可高达 8V。在 85°C 时，仅需 5%的电荷损失，在 125°C 时，仅需 10%的电荷损失，即可将保持时间外推至 106s。通过提取 Poole-Frenkel 电流，证明 TixZrySizO 薄膜的空穴俘获势垒高度为 1.15eV。这种优异的存储性能归因于低温退火的高介电常数溶胶-凝胶薄膜具有高俘获位。
