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基于硅衬底的超高品质因数平面氮化硅环形谐振器。

Ultra-high quality factor planar Si3N4 ring resonators on Si substrates.

作者信息

Tien Ming-Chun, Bauters Jared F, Heck Martijn J R, Spencer Daryl T, Blumenthal Daniel J, Bowers John E

机构信息

Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.

出版信息

Opt Express. 2011 Jul 4;19(14):13551-6. doi: 10.1364/OE.19.013551.

Abstract

We demonstrate planar Si3N4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 million, and 7 million at 1060 nm, 1310 nm, and 1550 nm, respectively. By integrating the ultra-low-loss Si3N4 ring resonators with laterally offset planar waveguide directional couplers, optical add-drop and notch filters are demonstrated to have ultra-narrow bandwidths of 16 MHz, 38 MHz, and 300 MHz at 1060 nm, 1310 nm, and 1550 nm, respectively. These are the highest Qs reported for ring resonators with planar directional couplers, and ultra-narrowband microwave photonic filters can be realized based on these high-Q ring resonators.

摘要

我们展示了平面氮化硅环形谐振器,在1060纳米、1310纳米和1550纳米处分别具有1900万、2800万和700万的超高品质因数(Q)。通过将超低损耗的氮化硅环形谐振器与横向偏移的平面波导定向耦合器集成,光分插复用器和陷波滤波器在1060纳米、1310纳米和1550纳米处分别具有16兆赫兹、38兆赫兹和300兆赫兹的超窄带宽。这些是具有平面定向耦合器的环形谐振器所报道的最高品质因数,并且基于这些高Q值环形谐振器可以实现超窄带微波光子滤波器。

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