Institute of Physics of the Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland.
Nano Lett. 2011 Aug 10;11(8):3319-23. doi: 10.1021/nl201687q. Epub 2011 Jul 25.
The electronic and magnetic properties of (Ga,Mn)As and (In,Mn)As nanowires are studied by ab initio methods. The results suggest that, in contrast to the bulk, in nanowires (In,Mn)As may exhibit better ferromagnetic behavior than (Ga,Mn)As. Moreover, the calculations show that in one-dimensional diluted magnetic semiconductors the distribution of Mn ions and the magnetic order depend crucially on the crystallographic structure. Since the growth of III-V nanowires of a given, either zinc blende or wurtzite, crystal structure is nowadays well controlled, these results can help to find the preferable material and conditions for the growth of ferromagnetic semiconductor nanowires.
通过第一性原理方法研究了（Ga，Mn）As 和（In，Mn）As 纳米线的电子和磁性。结果表明，与体材料相反，在纳米线中（In，Mn）As 可能表现出比（Ga，Mn）As 更好的铁磁行为。此外，计算表明在一维稀磁半导体中，Mn 离子的分布和磁有序状态取决于晶体结构。由于现今对给定的 III-V 纳米线，无论是闪锌矿还是纤锌矿结构，都能很好地控制其生长，这些结果可以帮助找到生长铁磁半导体纳米线的优选材料和条件。
