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低能量下使用CMOS探测器进行直接高分辨率电子图像采集的原理与前景

Principles and prospects of direct high resolution electron image acquisition with CMOS detectors at low energies.

作者信息

Faruqi A R

机构信息

MRC Laboratory of Molecular Biology, Hills Road, Cambridge CB2 0QH, UK.

出版信息

J Phys Condens Matter. 2009 Aug 5;21(31):314004. doi: 10.1088/0953-8984/21/31/314004. Epub 2009 Jul 7.

Abstract

Two types of direct electron detectors, potentially useful in low energy electron microscopy and photoemission electron microscopy (LEEM/PEEM) experiments, are reviewed in this paper. Hybrid pixel detectors, using a silicon sensor and based on Medipix2 offer a high detective quantum efficiency, due to an essentially noiseless readout, but are technically challenging. Backthinned monolithic active pixel sensors (MAPS) are not noise-free but have other advantages as discussed in this review.

摘要

本文综述了两种类型的直接电子探测器,它们在低能电子显微镜和光发射电子显微镜(LEEM/PEEM)实验中可能有用。基于Medipix2的混合像素探测器采用硅传感器,由于读出基本无噪声,因此具有高探测量子效率,但在技术上具有挑战性。背减薄单片有源像素传感器(MAPS)并非无噪声,但如本综述中所讨论的,具有其他优点。

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