量化用于透射电子显微镜的含砷化镓铬传感器的混合像素探测器的性能。
Quantifying the performance of a hybrid pixel detector with GaAs:Cr sensor for transmission electron microscopy.
作者信息
Paton Kirsty A, Veale Matthew C, Mu Xiaoke, Allen Christopher S, Maneuski Dzmitry, Kübel Christian, O'Shea Val, Kirkland Angus I, McGrouther Damien
机构信息
Scottish Universities Physics Alliance, School of Physics and Astronomy, University of Glasgow, G12 8QQ, UK.
UKRI Science & Technology Facilities Council, Rutherford Appleton Laboratory, Didcot, OX11 0QX, UK.
出版信息
Ultramicroscopy. 2021 Aug;227:113298. doi: 10.1016/j.ultramic.2021.113298. Epub 2021 Apr 29.
Hybrid pixel detectors (HPDs) have been shown to be highly effective for diffraction-based and time-resolved studies in transmission electron microscopy, but their performance is limited by the fact that high-energy electrons scatter over long distances in their thick Si sensors. An advantage of HPDs compared to monolithic active pixel sensors is that their sensors do not need to be fabricated from Si. We have compared the performance of the Medipix3 HPD with a Si sensor and a GaAs:Cr sensor using primary electrons in the energy range of 60-300 keV. We describe the measurement and calculation of the detectors' modulation transfer function (MTF) and detective quantum efficiency (DQE), which show that the performance of the GaAs:Cr device is markedly superior to that of the Si device for high-energy electrons.
混合像素探测器（HPD）已被证明在透射电子显微镜中基于衍射和时间分辨的研究中非常有效，但其性能受到高能电子在其厚硅传感器中长距离散射这一事实的限制。与单片有源像素传感器相比，HPD的一个优点是其传感器无需由硅制成。我们使用能量范围为60 - 300 keV的一次电子，比较了配备硅传感器的Medipix3 HPD和配备砷化镓铬（GaAs:Cr）传感器的Medipix3 HPD的性能。我们描述了探测器调制传递函数（MTF）和探测量子效率（DQE）的测量与计算，结果表明，对于高能电子，砷化镓铬器件的性能明显优于硅器件。
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