Solid State Physics and ‡Department of Electrical- and Information Technology, Lund University , Box 118, S-221 00, Lund, Sweden.
Nano Lett. 2011 Oct 12;11(10):4222-6. doi: 10.1021/nl202180b. Epub 2011 Sep 13.
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.
我们展示了断隙 GaSb-InAsSb 纳米线异质结的电学特性。在室温下，获得了最大反向电流为 1750 kA/cm(2) 的隧道二极管特性，在 0.50 V 时最大峰值电流为 67 kA/cm(2)，峰谷比 (PVR) 为 2.1。反向电流密度可与基于重掺杂 p-n 结的最先进的隧道二极管相媲美。然而，本工作中研究的 GaSb-InAsSb 二极管不依赖于重掺杂，这使得可以在具有高 k 栅介质和顶栅的简单晶体管结构中研究传输机制。这种处理方法得到了具有改进的 PVR（3.5）和电性能稳定性的器件。
