Division of Solid State Physics, Lund University, Box 118, SE-221 00, Lund, Sweden.
Nano Lett. 2010 Oct 13;10(10):4080-5. doi: 10.1021/nl102145h.
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.
通过 MOVPE 生长了具有薄 GaInAs 插入物的 InAs/GaSb 纳米线异质结构，并通过电测量和透射电子显微镜进行了表征。由于观察到 GaSb 纳米线生长对 In 的存在敏感，因此插入物厚度的缩小受到限制。通过在 InAs 和 GaInAs 生长步骤之间进行生长中断，可以达到 25nm 的插入物厚度。两端器件表现出二极管行为，其中温度相关测量表明异质结构势垒高度为 0.5eV，这被确定为 InAs 和 GaSb 之间的价带偏移。具有位于异质界面处的顶栅的三端晶体管结构清楚地表明了带对带隧穿。
