Centro de Investigación en Materiales Avanzados S, C,, Unidad Monterrey-PIIT, Apodaca, Nuevo León 66600, México.
Nanoscale Res Lett. 2011 Sep 7;6(1):524. doi: 10.1186/1556-276X-6-524.
A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS: 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.).
本文提出了一种在原子层沉积(ALD)得到的 ZnO 薄膜上生长垂直排列 ZnO 纳米棒阵列的水热方法。研究了 ZnO 纳米棒的生长与在硅(100)衬底上沉积的 ZnO 薄膜的结晶方向的关系。通过水热法生长之前,先获得了厚度约为 40 至 180nm 的不同 ZnO 薄膜,并对其进行了表征。通过二乙基锌的分解在衬底上形成具有沿正常 c 轴择优取向的织构化 ZnO 层,为垂直纳米棒生长提供成核点。通过 X 射线衍射分析确定了 ZnO 纳米棒和 ZnO-ALD 薄膜的结晶方向。使用扫描电子显微镜和能量色散 X 射线能谱分析研究了纳米棒的组成、形貌、长度、尺寸和直径。在这项工作中,证明了 ZnO-ALD 薄膜的结晶度在垂直排列 ZnO 纳米棒的生长中起着重要作用。在溶液中合成的纳米棒阵列具有直径、长度、密度和取向,适合作为半导体-聚合物太阳能电池制造中光敏感材料的应用。
61.46.Hk,纳米晶体;61.46.Km,纳米线和纳米棒的结构;81.07.Gf,纳米线;81.15.Gh,化学气相沉积(包括等离子体增强 CVD、MOCVD、ALD 等)。