Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
Microsc Microanal. 2011 Oct;17(5):728-51. doi: 10.1017/S1431927611000523. Epub 2011 Sep 12.
The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 μm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits.
本工作展示了通过扫描电子显微镜中的波长色散和能量色散 X 射线能谱（EDX）、透射电子显微镜中的 EDX、X 射线光电子能谱、角分辨软 X 射线发射谱、二次离子质谱（SIMS）、飞行时间 SIMS、溅射中性粒子质谱、辉光放电光发射和辉光放电质谱、俄歇电子能谱和卢瑟福背散射能谱，以及扫描俄歇电子显微镜、拉曼深度剖析和拉曼mapping，还有弹性反冲探测分析、掠入射 X 射线和电子背散射衍射、掠入射 X 射线荧光分析，对用于太阳能电池的 Cu(In,Ga)Se2 薄膜中的元素分布分析结果。本比较所使用的 Cu(In,Ga)Se2 薄膜是在相同的沉积过程中产生的，厚度约为 2 μm。比较了这些分析技术的空间分辨率和深度分辨率、测量速度、可用性和检测极限。
