Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
Micron. 2012 Feb;43(2-3):470-4. doi: 10.1016/j.micron.2011.11.004. Epub 2011 Dec 2.
When producing slices from Cu(In,Ga)(S,Se)(2) thin films for solar cells by use of a focused ion beam (FIB), agglomerates form on the Cu(In,Ga)(S,Se)(2) surfaces, which deteriorate substantially the imaging and analysis in scanning electron microscopy. Similar problems are also experienced when depth-profiling Cu(In,Ga)(S,Se)(2) thin films by means of glow-discharge or secondary ion mass spectrometry. The present work shows that the agglomerates are composed of (mainly) Cu, and that their formation may be impeded considerably by either cooling of the sample or by use of reactive gases during the ion-beam sputtering. The introduction of XeF(2) during FIB slicing resulted in excellent images, in which the microstructures of most layers in the Cu(In,Ga)(S,Se)(2) thin film stack are visible, including the microstructure of the 20 nm thin MoSe(2) layer. Acquisition of high-quality two-dimensional and also three-dimensional electron backscatter diffraction data was possible. The present work gives a basis for enhanced SEM imaging and analysis not only in the case of Cu(In,Ga)(S,Se)(2) thin films but also when dealing with further material systems exhibiting similar formations of agglomerates.
当使用聚焦离子束（FIB）从 Cu(In,Ga)(S,Se)(2) 薄膜中制备太阳能电池切片时，在 Cu(In,Ga)(S,Se)(2) 表面会形成团聚物，这会严重影响扫描电子显微镜的成像和分析。在使用辉光放电或二次离子质谱法对 Cu(In,Ga)(S,Se)(2) 薄膜进行深度剖析时，也会遇到类似的问题。本工作表明，团聚物主要由 Cu 组成，通过冷却样品或在离子束溅射过程中使用反应性气体，可以大大抑制其形成。在 FIB 切片过程中引入 XeF(2)，可以得到非常好的图像，其中 Cu(In,Ga)(S,Se)(2) 薄膜堆栈中的大多数层的微观结构都可见，包括 20nm 厚的 MoSe(2)层的微观结构。可以获取高质量的二维和三维背散射电子衍射数据。本工作不仅为增强 Cu(In,Ga)(S,Se)(2) 薄膜的 SEM 成像和分析提供了基础，而且还为处理具有类似团聚物形成的其他材料系统提供了基础。
