Ilahi Bouraoui, Zribi Jihene, Guillotte Maxime, Arès Richard, Aimez Vincent, Morris Denis
King Saud University, Department of Physics & Astronomy, College of Sciences, Riyadh 11451, Saudi Arabia.
Université de Sherbrooke, Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Sherbrooke, QC J1K OA5, Canada.
Materials (Basel). 2016 Jun 24;9(7):511. doi: 10.3390/ma9070511.
We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode's active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, allowing a tunable emission band over 160 nm. The emission wavelength blueshift has been ensured by reducing both dots' height and composition. A structure containing four vertically stacked height-engineered QDs have been fabricated, showing a room temperature broad emission band centered at 1.1 µm. The buried QD layers remain insensitive to the In-flush process of the subsequent layers, testifying the reliability of the process for broadband light sources required for high axial resolution OCT imaging.
我们报道了基于化学束外延（CBE）生长的波长可调谐砷化铟/砷化镓量子点（QD）有源层，该有源层适用于光学相干断层扫描（OCT）的超发光二极管。采用了原位生长技术来制造高度可控的量子点，高度范围从5纳米降至2纳米，从而实现了超过160纳米的可调发射带。通过降低量子点的高度和成分确保了发射波长的蓝移。已经制造出一种包含四个垂直堆叠的高度工程化量子点的结构，在室温下显示出以1.1微米为中心的宽带发射带。掩埋的量子点层对后续层的原位生长过程不敏感，这证明了该过程对于高轴向分辨率OCT成像所需的宽带光源的可靠性。
