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电压门控质子通道的孔。

The pore of the voltage-gated proton channel.

机构信息

Department of Molecular and Cell Biology and Helen Wills Neuroscience Institute, 142 Life Sciences Addition, University of California Berkeley, Berkeley, CA 94720, USA.

出版信息

Neuron. 2011 Dec 22;72(6):991-1000. doi: 10.1016/j.neuron.2011.11.014.

Abstract

In classical tetrameric voltage-gated ion channels four voltage-sensing domains (VSDs), one from each subunit, control one ion permeation pathway formed by four pore domains. The human Hv1 proton channel has a different architecture, containing a VSD, but lacking a pore domain. Since its location is not known, we searched for the Hv permeation pathway. We find that mutation of the S4 segment's third arginine R211 (R3) compromises proton selectivity, enabling conduction of a metal cation and even of the large organic cation guanidinium, reminiscent of Shaker's omega pore. In the open state, R3 appears to interact with an aspartate (D112) that is situated in the middle of S1 and is unique to Hv channels. The double mutation of both residues further compromises cation selectivity. We propose that membrane depolarization reversibly positions R3 next to D112 in the transmembrane VSD to form the ion selectivity filter in the channel's open conformation.

摘要

在经典的四聚体电压门控离子通道中,四个电压感应结构域(VSD),分别来自每个亚基,控制由四个孔结构域形成的一个离子渗透途径。人类 Hv1 质子通道具有不同的结构,包含一个 VSD,但缺乏一个孔结构域。由于其位置未知,我们寻找 Hv 渗透途径。我们发现,S4 段第三个精氨酸 R211(R3)的突变会损害质子选择性,使金属阳离子甚至大有机阳离子胍的传导成为可能,这让人联想到 Shaker 的ω孔。在开放状态下,R3 似乎与位于 S1 中部且仅存在于 Hv 通道中的天冬氨酸(D112)相互作用。这两个残基的双突变进一步损害了阳离子选择性。我们提出,膜去极化可使 R3 与跨膜 VSD 中的 D112 可逆地定位在邻近位置,从而在通道的开放构象中形成离子选择性过滤器。

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