Lou Kai, Qian Sheng-Xia, Wang Xi-Lin, Li Yongnan, Gu Bing, Tu Chenghou, Wang Hui-Tian
MOE Key Laboratory of Weak Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, China.
Opt Express. 2012 Jan 2;20(1):120-7. doi: 10.1364/OE.20.000120.
We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm when the pulse fluence of 0.26 J/cm2 is slightly higher than the ablated threshold of 0.2 J/cm2 for silicon under the irradiation of 100 pulses. The ripples are always perpendicular to the direction of the locally linear polarization. The designable spatial structure of polarization of the femtosecond vector light field can be used to manipulate the fabricated microstructure.
我们在硅上制备了由飞秒矢量光场诱导的复杂二维亚波长微结构。当脉冲能量密度为0.26 J/cm²，略高于硅在100个脉冲照射下0.2 J/cm²的烧蚀阈值时，制备的微结构中两个波纹之间的间距约为670 - 690 nm，沟槽深度约为300 nm。这些波纹始终垂直于局部线性偏振方向。飞秒矢量光场可设计的偏振空间结构可用于操控制备的微结构。
