利用飞秒激光辐照和氧依赖酸蚀刻在硅中制备高深宽比凹槽。
Fabrication of high-aspect-ratio grooves in silicon using femtosecond laser irradiation and oxygen-dependent acid etching.
作者信息
Pan An, Si Jinhai, Chen Tao, Ma Yuncan, Chen Feng, Hou Xun
机构信息
Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronics & Information Engineering Xi’an Jiaotong University, No 28, Xianning West Road, Xi’an, 710049, China.
出版信息
Opt Express. 2013 Jul 15;21(14):16657-62. doi: 10.1364/OE.21.016657.
We demonstrated a new method to fabricate micron-sized grooves with high aspect ratios in silicon wafers by combining femtosecond laser irradiation and oxygen-dependent acid etching. Femtosecond laser was employed to induce structure changes and incorporate oxygen into silicon, and then materials in oxygen-containing regions were etched by hydrofluoric acid (HF) solution to form grooves. The etching could be attributed to the reaction between HF and silicon oxides formed by femtosecond laser irradiation. The dependences of the aspect ratios of grooves on the laser fluence and the scanning velocity were also investigated.
我们展示了一种通过结合飞秒激光辐照和氧依赖酸蚀刻在硅片中制造具有高纵横比的微米级凹槽的新方法。采用飞秒激光诱导结构变化并将氧引入硅中，然后用氢氟酸（HF）溶液蚀刻含氧区域的材料以形成凹槽。蚀刻可归因于HF与飞秒激光辐照形成的氧化硅之间的反应。还研究了凹槽纵横比对激光能量密度和扫描速度的依赖性。
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