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通过抑制成核作用在铜箔上可控合成亚毫米单晶单层石墨烯畴

Controllable synthesis of submillimeter single-crystal monolayer graphene domains on copper foils by suppressing nucleation.

机构信息

Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, PR China.

出版信息

J Am Chem Soc. 2012 Feb 29;134(8):3627-30. doi: 10.1021/ja2105976. Epub 2012 Feb 16.

DOI:10.1021/ja2105976
PMID:22324740
Abstract

Submillimeter single-crystal monolayer and multilayer graphene domains were prepared by an atmospheric pressure chemical vapor deposition method with suppressing nucleation on copper foils through an annealing procedure. A facile oxidation visualization method was applied to study the nucleation density and morphology of graphene domains on copper foils. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, polarized optical microscopy, and Raman spectra showed that the submillimeter graphene domains were monolayer single crystals.

摘要

采用常压化学气相沉积法,通过退火工艺抑制铜箔上的成核,制备了亚毫米级单晶和多层石墨烯畴。应用一种简便的氧化可视化方法研究了铜箔上石墨烯畴的成核密度和形貌。扫描电子显微镜、透射电子显微镜、原子力显微镜、偏振光显微镜和拉曼光谱表明,亚毫米级石墨烯畴为单层单晶。

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