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电压门控钾通道中电压感应结构域与孔道结构域之间的偶联。

Coupling between the voltage-sensing and pore domains in a voltage-gated potassium channel.

作者信息

Schow Eric V, Freites J Alfredo, Nizkorodov Alex, White Stephen H, Tobias Douglas J

机构信息

Department of Chemistry, University of California, Irvine, CA 92697-2025, USA.

出版信息

Biochim Biophys Acta. 2012 Jul;1818(7):1726-36. doi: 10.1016/j.bbamem.2012.02.029.

Abstract

Voltage-dependent potassium (Kv), sodium (Nav), and calcium channels open and close in response to changes in transmembrane (TM) potential, thus regulating cell excitability by controlling ion flow across the membrane. An outstanding question concerning voltage gating is how voltage-induced conformational changes of the channel voltage-sensing domains (VSDs) are coupled through the S4-S5 interfacial linking helices to the opening and closing of the pore domain (PD). To investigate the coupling between the VSDs and the PD, we generated a closed Kv channel configuration from Aeropyrum pernix (KvAP) using atomistic simulations with experiment-based restraints on the VSDs. Full closure of the channel required, in addition to the experimentally determined TM displacement, that the VSDs be displaced both inwardly and laterally around the PD. This twisting motion generates a tight hydrophobic interface between the S4-S5 linkers and the C-terminal ends of the pore domain S6 helices in agreement with available experimental evidence.

摘要

电压依赖性钾(Kv)、钠(Nav)和钙通道会根据跨膜(TM)电位的变化而开启和关闭,从而通过控制离子跨膜流动来调节细胞兴奋性。关于电压门控的一个突出问题是,通道电压感应结构域(VSD)的电压诱导构象变化如何通过S4-S5界面连接螺旋与孔道结构域(PD)的开启和关闭相耦合。为了研究VSD与PD之间的耦合,我们使用基于实验限制的原子模拟,从嗜热栖热菌(KvAP)中生成了一种封闭的Kv通道构型。除了实验确定的TM位移外,通道的完全关闭还要求VSD围绕PD向内和横向位移。这种扭曲运动会在S4-S5连接子与孔道结构域S6螺旋的C末端之间产生紧密的疏水界面,这与现有的实验证据一致。

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