在p型氮化镓上两步沉积铝掺杂氧化锌以形成欧姆接触。
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.
作者信息
Su Xi, Zhang Guozhen, Wang Xiao, Chen Chao, Wu Hao, Liu Chang
机构信息
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China.
出版信息
Nanoscale Res Lett. 2017 Dec;12(1):469. doi: 10.1186/s11671-017-2239-x. Epub 2017 Jul 26.
Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 Ω·cm. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.
通过采用由聚合物辅助沉积（PAD）和原子层沉积（ALD）方法组成的两步沉积法，将掺铝氧化锌（AZO）薄膜直接沉积在p型氮化镓衬底上。已形成了AZO与p型氮化镓之间的欧姆接触。两步法制备的AZO薄膜的最低薄层电阻达到145Ω/sq，比接触电阻降低到1.47×10Ω·cm。AZO薄膜在可见光区域的透过率保持在80%以上。PAD和ALD技术的结合可用于制备用于光电子学的p型欧姆接触。
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