Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan.
IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Mar;59(3):346-57. doi: 10.1109/TUFFC.2012.2203.
Integrated CMOS-MEMS free-free beam resonator arrays operated in a standard two-port electrical configuration with low motional impedance and high power handling capability, centered at 10.5 MHz, have been demonstrated using the combination of pull-in gap reduction mechanism and mechanically coupled array design. The mechanical links (i.e., coupling elements) using short stubs connect each constituent resonator of an array to its adjacent ones at the high-velocity vibrating locations to accentuate the desired mode and reject all other spurious modes. A single second-mode free-free beam resonator with quality factor Q > 2200 and motional impedance R(m) < 150 kΩ has been used to achieve mechanically coupled resonator arrays in this work. In array design, a 9-resonator array has been experimentally characterized to have performance improvement of approximately 10× on motional impedance and power handling as compared with that of a single resonator. In addition, the two-port electrical configuration is much preferred over a one-port configuration because of its low-feedthrough and high design flexibility for future oscillator and filter implementation.
采用提拉间隙减小机制和机械耦合阵列设计相结合的方法,展示了中心频率为 10.5MHz 的工作在标准两端口电学结构下、具有低运动阻抗和高功率处理能力的集成 CMOS-MEMS 自由-自由梁谐振器阵列。机械连接(即耦合元件)采用短突片将阵列的每个组成谐振器连接到其在高速度振动位置的相邻谐振器,以强调所需的模式并拒绝所有其他杂散模式。在这项工作中,使用具有 Q 因子>2200 和运动阻抗 R(m)<150kΩ的单个二阶自由-自由梁谐振器来实现机械耦合谐振器阵列。在阵列设计中,实验表征了一个 9 谐振器阵列,与单个谐振器相比,其运动阻抗和功率处理能力提高了约 10 倍。此外,由于其低馈通和高设计灵活性,两端口电气配置比单端口配置更受欢迎,可用于未来振荡器和滤波器的实现。