Sun Z, Li H, Wang X
J Appl Phys. 2012 Apr 1;111(7):7C726-7C7263. doi: 10.1063/1.3679647. Epub 2012 Mar 13.
This work investigates the magnetic tunnel junction (MTJ) design requirements for the application of nondestructive self-reference sensing scheme, a novel sensing scheme featuring high tolerance of process variations, fast sensing speed, and no impact on device reliability. Unlike the conventional sensing scheme that requires a large TMR ratio and the uniform antiparallel and parallel resistances for MTJs, the nondestructive self-reference sensing scheme is more sensitive to the roll-off slope of MTJ's R-I or R-V curve. Our purpose is to provide a guidance to facilitate MTJ design used in the nondestructive self-reference scheme. In this work, we comprehensively investigate and analyze the design matrix by considering MTJ device physical properties, such as bias voltage dependent conductance, spin torque, etc. The manuscript suggests the approaches to optimize MTJ design for better trade-off between device properties and circuit design.
本工作研究了用于无损自参考传感方案的磁性隧道结（MTJ）设计要求，该方案是一种具有工艺变化高容忍度、快速传感速度且对器件可靠性无影响的新型传感方案。与传统传感方案不同，传统方案要求MTJ具有大的隧穿磁电阻（TMR）比以及均匀的反平行和平行电阻，而无损自参考传感方案对MTJ的R-I或R-V曲线的滚降斜率更为敏感。我们的目的是提供指导，以促进用于无损自参考方案的MTJ设计。在本工作中，我们通过考虑MTJ器件的物理特性，如偏置电压相关电导、自旋扭矩等，全面研究和分析了设计矩阵。该论文提出了优化MTJ设计的方法，以便在器件特性和电路设计之间实现更好的权衡。
