Long Jingwei, Hu Qi, Yuan Zhengping, Zhang Yunsen, Xin Yue, Ren Jie, Dong Bowen, Li Gengfei, Yang Yumeng, Li Huihui, Zhu Zhifeng
School of Information Science and Technology, Shanghai Tech University, Shanghai 201210, China.
Beijing Superstring Academy of Memory Technology, Beijing 100176, China.
Nanomaterials (Basel). 2023 Jan 13;13(2):337. doi: 10.3390/nano13020337.
The writing performance of the easy-cone magnetic tunnel junction (MTJ) and perpendicularly magnetized MTJ (pMTJ) under various temperatures was investigated based on the macrospin model. When the temperature is changed from 273 K to 373 K, the switching current density of the pMTJ changes by 56%, whereas this value is only 8% in the easy-cone MTJ. Similarly, the temperature-induced variation of the switching delay is more significant in the pMTJ. This indicates that the easy-cone MTJ has a more stable writing performance under temperature variations, resulting in a wider operating temperature range. In addition, these two types of MTJs exhibit opposite temperature dependence in the current overdrive and write error rate. In the easy cone MTJ, these two performance metrics will reduce as temperature is increased. The results shown in this work demonstrate that the easy-cone MTJ is more suitable to work at high temperatures compared with the pMTJ. Our work provides a guidance for the design of STT-MRAM that is required to operate at high temperatures.
基于宏自旋模型，研究了易锥磁隧道结（MTJ）和垂直磁化MTJ（pMTJ）在不同温度下的写入性能。当温度从273 K变化到373 K时，pMTJ的开关电流密度变化了56%，而在易锥MTJ中该值仅为8%。同样，pMTJ中开关延迟的温度诱导变化更为显著。这表明易锥MTJ在温度变化下具有更稳定的写入性能，从而导致更宽的工作温度范围。此外，这两种类型的MTJ在电流过驱动和写入错误率方面表现出相反的温度依赖性。在易锥MTJ中，随着温度升高，这两个性能指标会降低。这项工作所示的结果表明，与pMTJ相比，易锥MTJ更适合在高温下工作。我们的工作为高温下运行所需的自旋转移力矩随机存取存储器（STT-MRAM）的设计提供了指导。
