Macroscopic assembly of indefinitely long and parallel nanowires into large area photodetection circuitry.

Integration of nanowires into functional devices with high yields and good reliability turned out to be a lot more challenging and proved to be a critical issue obstructing the wide application of nanowire-based devices and exploitation of their technical promises. Here we demonstrate a relatively easy macrofabrication of a nanowire-based imaging circuitry using a recently developed nanofabrication technique. Extremely long and polymer encapsulated semiconducting nanowire arrays, mass-produced using the iterative thermal drawing, facilitate the integration process; we manually aligned the fibers containing selenium nanowires over a lithographically defined circuitry. Controlled etching of the encapsulating polymer revealed a monolayer of nanowires aligned over an area of 1 cm(2) containing a 10 × 10 pixel array. Each light-sensitive pixel is formed by the contacting hundreds of parallel photoconductive nanowires between two electrodes. Using the pixel array, alphabetic characters were identified by the circuitry to demonstrate its imaging capacity. This new approach makes it possible to devise extremely large nanowire devices on planar, flexible, or curved substrates with diverse functionalities such as thermal sensors, phase change memory, and artificial skin.